The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal
Author:
Funder
Natural Science Foundation of Gansu Province
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02778-9.pdf
Reference28 articles.
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2. Hossain MM, Watauchi S, Nagao M et al (2014) Feed size dependence of position effects of mirror-lamp system on shape of silicon crystal during its growth by mirror-shifting-type infrared convergent-heating floating zone method. Cryst Growth Des 14(10):5117–5121. https://doi.org/10.1021/cg500740r
3. Teng R, Li Y, Cui B et al (2017) Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm czochralski silicon crystal growth. Rare Met 36(2):134–141. https://doi.org/10.1007/s12598-016-0865-6
4. Vegad M, Bhatt NM (2014) Review of some aspects of single crystal growth using Czochralski Crystal growth technique. Procedia Technol 14:438–446. https://doi.org/10.1016/j.protcy.2014.08.056
5. Raufeisen A, Breuer M, Botsch T et al (2008) DNS of rotating buoyancy– and surface tension–driven flow. Int J Heat Mass Tran 51(25–26):6219–6234. https://doi.org/10.1016/j.ijheatmasstransfer.2008.01.041
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