Effects of lamp power and mirror position on the interface shape of the silicon molten zone during infrared convergent heating-Reference-Cited by-同舟云学术

Effects of lamp power and mirror position on the interface shape of the silicon molten zone during infrared convergent heating

Published:2014 Issue:21 Volume:16 Page:4619-4623
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Hossain Md. Mukter¹²³,Watauchi Satoshi¹²³⁴⁵,Nagao Masanori¹²³,Tanaka Isao¹²³

Affiliation:

1. Center for Crystal Science and Technology

2. University of Yamanashi

3. Kofu, Japan

4. Precursory Research for Embryonic Science and Technology (PRESTO)

5. Japan Science and Technology Agency (JST)

Abstract

The effects of lamp power and mirror position on the feed–melt and crystal–melt interfaces during the growth of a silicon crystal were examined using the mirror-shifting-type infrared convergent-heating floating-zone (IR-FZ) method.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE00235K

Reference19 articles.

1. Historical overview of silicon crystal pulling development

2. Large diameter silicon technology and epitaxy

3. Growth of silicon crystal with a diameter of 400mm and weight of 400kg

4. Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

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