Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon-Reference-Cited by-同舟云学术

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Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon

Published:2023-04-01 Issue:12 Volume:15 Page:5307-5315
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Su Wenjia,Li Jiaqi,Li Jiulong,Guan Zhicheng,Zhang Zhen

Funder

Key Research and Development Program of Jiangsu Province of China

Wuxi Suntech Solar Power

The National Natural Science Foundation for Young Scholars of China

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02430-6.pdf

Reference18 articles.

1. Czochralski J (1918) Ein Verfahren zur Messung der Kristallisatiorsgeschwindigkeit der Metalle. Z Anal Chem 57(8):373–374. https://doi.org/10.1007/BF01473047

2. Uecker R (2014) The historical development of the Czochralski method. J Cryst Growth 401:7–24. https://doi.org/10.1016/j.jcrysgro.2013.11.095

3. Jeon H, Park H, Koyyada G et al (2020) Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation. Processes 8:1077. https://doi.org/10.3390/pr8091077

4. Voronkov V (1982) The mechanism of swirl defects formation in silicon. J Cryst Growth 59(3):625–643. https://doi.org/10.1016/0022-0248(82)90386-4

5. Huang X, Taishi T, Wang T et al (2001) Measurement of temperature gradient in Czochralski silicon crystal growth. J Cryst Growth 229(1):6–10. https://doi.org/10.1016/S0022-0248(01)01040-5

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method;Silicon;2024-04-29

2. The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal;Silicon;2023-11-28

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