Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3641635
Reference60 articles.
1. The mechanism of swirl defects formation in silicon
2. Vacancy-type microdefect formation in Czochralski silicon
3. Vacancy and self-interstitial concentration incorporated into growing silicon crystals
4. Intrinsic Point Defects and Impurities in Silicon Crystal Growth
5. The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growth
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