n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. GaN-based epitaxy on silicon: stress measurements
2. N-type doping behavior of A10.15Ga0.85N:Si with various Si incorporations
3. Optical investigation of strain in Si-doped GaN films
4. Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy
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