Affiliation:
1. Institute of Industrial Science, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153 8505, Japan
Abstract
This study reports on the epitaxial growth of heavily Sn-doped GaN films by pulsed sputtering deposition (PSD) and their basic characteristics, which include electrical, optical, and structural properties. Heavily Sn-doped GaN yielded a maximum electron concentration of 2.0 × 1020 cm−3 while keeping an atomically flat surface. The high electron concentration was confirmed by Raman spectroscopy measurements. X-ray diffraction analysis revealed that the Sn dopants exhibited a positive-size effect coefficient, which is opposite to conventional n-type dopants, such as Si and Ge. Furthermore, the shifts toward higher energy of optical bandgap energies and near-band edge emission peaks clearly indicated the highly degenerated nature of the PSD-grown Sn-doped GaN. These results indicate that the introduction of Sn atoms is quite promising for stress control in n-type GaN.
Funder
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D
Japan Society for the Promotion of Science
Iketani Science and Technology Foundation
Subject
Physics and Astronomy (miscellaneous)
Cited by
6 articles.
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