Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications-Reference-Cited by-同舟云学术

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Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Published:2016-12 Issue: Volume:455 Page:105-110
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Young N.G.,Farrell R.M.,Iza M.,Nakamura S.,DenBaars S.P.,Weisbuch C.,Speck J.S.

Funder

KACST-KAUST-UCSB Solid State Lighting Program

Solid State Lighting and Energy Electronics Center

NSF MRSEC Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

3. Origin of electrons emitted into vacuum from InGaN light emitting diodes

4. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

5. On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes

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1. Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy;physica status solidi (a);2024-04-21

2. Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells;physica status solidi (a);2023-06

3. Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering;Applied Physics Letters;2023-02-20

4. Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates;Journal of Electronic Materials;2022-12-12

5. Role of Metallic Adlayer in Limiting Ge Incorporation into GaN;Materials;2022-08-27

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