Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3-Reference-Cited by-同舟云学术

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3

Published:2014-08-18 Issue:7 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Feneberg Martin,Osterburg Sarah,Lange Karsten,Lidig Christian,Garke Bernd,Goldhahn Rüdiger,Richter Eberhard,Netzel Carsten,Neumann Maciej D.,Esser Norbert,Fritze Stephanie,Witte Hartmut,Bläsing Jürgen,Dadgar Armin,Krost Alois

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.075203/fulltext

Reference46 articles.

1. The Interpretation of the Properties of Indium Antimonide

2. Anomalous Optical Absorption Limit in InSb

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4. Heavily doped semiconductors and devices

5. Energy gap in Si and Ge: Impurity dependence

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