Abstract
Abstract
We reported the growth of (AlGa)2O3 layers on (11
2
¯
0), (10
1
¯
0), and (10
1
¯
2) α-Al2O3 substrates using MBE, and the electrical characterization of Si-doped (AlGa)2O3 layers. The Ga2O3 layers grown on (10
1
¯
0) and (10
1
¯
2) α-Al2O3 were α-phase single crystals, while the Ga2O3 layer grown on (11
2
¯
0) α-Al2O3 consisted of (11
2
¯
0) α-Ga2O3 and (
2
¯
01) β-Ga2O3. The Al composition of the (11
2
¯
0) and (10
1
¯
0) (AlGa)2O3 layers was controlled by varying the Al flux. The Si-doped (10
1
¯
0) α-(Al
x
Ga1-x
)2O3 layers with x = 0–0.41 were electrically conducting.
Funder
New Energy and Industrial Technology Development Organization
Cited by
3 articles.
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