Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography
Author:
Affiliation:
1. Université Grenoble-Alpes, CEA, Leti, 17 Av. des Martyrs, F-38000 Grenoble, France
2. Université Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 Av. des Martyrs, F-38000 Grenoble, France
Funder
Agence Nationale de la Recherche
R?gion Auvergne-Rh?ne-Alpes
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.2c18813
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1. Review—The Current and Emerging Applications of the III-Nitrides
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5. Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
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