Full InGaN red light emitting diodes
Author:
Affiliation:
1. University of Grenoble-Alpes, CEA, LETI, Minatec Campus, F-38054 Grenoble, France
2. CRHEA-CNRS, 06560 Valbonne, France
3. Soitec S.A., 38190 Bernin, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0016217
Reference38 articles.
1. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application
2. CMOS-Controlled Color-Tunable Smart Display
3. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations
4. Yellow–red emission from (Ga,In)N heterostructures
5. Solid phase immiscibility in GaInN
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