N-type doping behavior of A10.15Ga0.85N:Si with various Si incorporations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. InGaN/AlGaN blue‐light‐emitting diodes
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4. Shortest wavelength semiconductor laser diode
5. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
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1. Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-09-20
2. Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-09-01
3. Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction;Journal of Electronic Materials;2008-10-08
4. Characteristics of InGaN multiple quantum well blue-violet laser diodes;Science in China Series E: Technological Sciences;2006-12
5. N-type doping of GaN/Si(111) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice;Journal of Crystal Growth;2006-01
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