Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD-Reference-Cited by-同舟云学术

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Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD

Published:2018-11 Issue: Volume:501 Page:7-12
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lumbantoruan Franky^ORCID,Zheng Xia-Xi,Huang Jian-Hao,Huang Ren-Yao,Mangasa Firman,Chang Edward-Yi,Tu Yung-Yi,Lee Ching-Ting

Funder

Ministry of Science and Technology, Taiwan

National Chung-Shan Institute of Science & Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure;Medjdoub;Appl. Phys. Express.,2015

2. Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz;Makiyama,2015

3. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate;Liu;Appl. Phys. Lett.,2005

4. In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs;Gamarra;J. Cryst. Growth,2017

5. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs;Wang;IEEE Electron. Dev. Lett.,2011

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE;Applied Physics Letters;2024-07-01

2. High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications;ECS Journal of Solid State Science and Technology;2023-07-01

3. Realization of p-type conduction in compositionally graded quaternary AlInGaN;Micro and Nanostructures;2022-10

4. Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition;Thin Solid Films;2022-07

5. Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition;Applied Physics Express;2022-01-10

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