Realization of p-type conduction in compositionally graded quaternary AlInGaN

Author:

Zhao Chunlei,Deng Gaoqiang,Zhang Lidong,Wang Yang,Niu Yunfei,Yu Jiaqi,Shi Zhifeng,Du Guotong,Li Xiaohang,Zhang YuantaoORCID

Publisher

Elsevier BV

Reference30 articles.

1. Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes;Fudetani;Appl. Phys. Lett.,2021

2. Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser;Gandrothula;APEX,2021

3. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode;Yang;J. Semiconduct.,2022

4. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures;Lingaparthi;Appl. Phys. Lett.,2021

5. Polarization-enhanced AlGaN solar-blind ultraviolet detectors;Jiang;Photon. Res.,2020

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