How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
Author:
Funder
Japan Science and Technology Agency
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Nobel Lecture: growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation;Amano;Rev. Mod. Phys.,2015
2. Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures;Langer;Phys. Status Solidi C,2011
3. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
4. Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics;Mikulics;Appl. Phys. Lett.,2016
5. Improved crystal quality of semipolar (1 0 −1 3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer;Lee;J. Crys. Growth,2016
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