Impact of graphene state on the orientation of III–nitride

Abstract

We attempted to grow (10–13) semi-polar GaN on graphene to confirm the possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was obtained on an optimized template using optimized growth conditions. However, (10–13), (0002), and other GaN orientations were found under the same growth conditions on a graphene-coated template. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy revealed that multi-domain GaN and (0002) GaN occurred in areas with a damaged graphene interfacial layer and intact graphene, respectively. Raman spectroscopy confirmed that graphene could survive under the growth conditions used here. Using cross-sectional scanning electron microscopy, we propose a simple approach to distinguish damaged graphene. Although the remote epitaxy of semi-polar GaN has not been demonstrated despite the usage of an optimized template and growth conditions, our results confirm the importance of the interfacial state in determining the crystallinity of the overgrown layer.