Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics-Reference-Cited by-同舟云学术

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Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics

Published:2016-07-25 Issue:4 Volume:109 Page:041103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mikulics M.¹²,Winden A.³,Marso M.⁴,Moonshiram A.⁴,Lüth H.¹²,Grützmacher D.¹²,Hardtdegen H.¹²^ORCID

Affiliation:

1. Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

2. Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany

3. Robert Bosch GmbH, D-72760 Reutlingen, Germany

4. Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg, Luxembourg

Funder

Bundesministerium für Bildung und Forschung (BMBF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960007

Reference27 articles.

1. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

2. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

3. GaN based nanorods for solid state lighting

4. Single-photon generation and detection

5. Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

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