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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

  • Published:2018-09 Issue: Volume:498 Page:352-356
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Hite J.K.,Anderson T.J.,Luna L.E.,Gallagher J.C.,Mastro M.A.,Freitas J.A.,Eddy C.R.

Funder

U.S. Naval Research Laboratory

American Association for Engineering Education NRL Postdoctoral Fellow Program

Office of Naval Research

NRL Institute for Nanoscience

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Progress and prospect of the growth of wide-band-gap group III nitrides: development of the growth method for single-crystal bulk GaN;Amano;Jpn. J. Appl. Phys.,2013

2. Growth and appications of Group III-nitrides;Ambacher;J. Phys. D,1998

3. Fabrication and performance of GaN electronic devices;Pearton;Mater. Sci. Eng. R,2000

4. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes;Nakamura;Rev. Mod. Phys.,2015

5. Substrates for epitaxy of gallium nitride: new materials and technology;Kukushkin;Rev. Adv. Mater. Sci.,2004
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