The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
2. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
3. Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
4. Ammonothermal growth of bulk GaN
5. Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method
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1. Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy;Crystal Growth & Design;2023-12-04
2. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;CrystEngComm;2022
3. Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films;CrystEngComm;2021
4. 2 in. Free-standing GaN grown by HVPE with sputtered AlN buffer on GaAs substrate;Journal of Crystal Growth;2020-06
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