Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates-Reference-Cited by-同舟云学术

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Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

Published:2004-10 Issue:3-4 Volume:270 Page:409-419
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Boćkowski M.,Grzegory I.,Krukowski S.,Łucznik B.,Wróblewski M.,Kamler G.,Borysiuk J.,Kwiatkowski P.,Jasik K.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

2. Nitride Semiconductors Handbook on Material and Devices;Gibart,2003

3. Crystal growth and liquid-phase epitaxy of gallium nitride

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2. III-Nitride-Based Short-Wavelength Ultraviolet Light Sources;Reference Module in Materials Science and Materials Engineering;2016

3. High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals;Handbook of Crystal Growth;2015

4. High nitrogen pressure solution growth of GaN;Japanese Journal of Applied Physics;2014-09-08

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