AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
2. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
3. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
4. High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
5. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
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2. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy;Thin Solid Films;2024-02
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