High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia-Reference-Cited by-同舟云学术

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High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

Published:1999-07-26 Issue:4 Volume:75 Page:484-486
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nikishin S. A.,Antipov V. G.,Francoeur S.,Faleev N. N.,Seryogin G. A.,Elyukhin V. A.,Temkin H.,Prokofyeva T. I.,Holtz M.,Konkar A.,Zollner S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124423

Reference17 articles.

1. Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)

2. Ultraviolet and violet GaN light emitting diodes on silicon

3. Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

4. The Effect of Growth Temperature On The Microstructure of Movpe AlN/Si (111)

5. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

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4. Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate;Thin Solid Films;2018-10

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