Growth of GaN films on circle array patterned Si (111) substrates-Reference-Cited by-同舟云学术

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Growth of GaN films on circle array patterned Si (111) substrates

Published:2014-09 Issue: Volume:401 Page:648-651
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lin Kung-Liang,Tran Binh Tinh,Chung Chen-Chen,Chang Edward-Yi

Funder

National Science Council

Ministry of Economic Affairs

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Defect structure in selective area growth GaN pyramid on (111)Si substrate

2. Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

3. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

4. GaN-based epitaxy on silicon: stress measurements

5. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suspended-ultrathin Si membrane on SOI: a novel structure to reduce thermal stress of GaN epilayer;IOP Conference Series: Materials Science and Engineering;2020-03-01

2. Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate;Scientific Reports;2017-09-22

3. High-quality AlN template grown on a patterned Si(111) substrate;Journal of Crystal Growth;2017-06

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