Defect structure in selective area growth GaN pyramid on (111)Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126448
Reference17 articles.
1. Defect structure in selectively grown GaN films with low threading dislocation density
2. Configuration of dislocations in lateral overgrowth GaN films
3. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
4. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
5. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
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