Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-11757-1.pdf
Reference26 articles.
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2. Hirayama, H. et al. Development of 230–270 nm AlGaN-based deep-UV LEDs. Electr. Commun. Jpn 93, 24–33 (2010).
3. Hirayama, H. et al. Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. Phys. Status Solidi (C) 5, 2283–2285 (2008).
4. Hirayama, H. et al. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. Phys. Status Solidi (A) 206, 1176–1182 (2009).
5. Khan, A. et al. Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics 2, 77–84 (2008).
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