Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
1. Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice
2. Role of hole trapping in the unintentionally doped GaN layer in suppressing the two-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si
3. GaN-on-Si HEMTs for wireless base stations
4. Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate
5. GaN grown on Si(111) with step-graded AlGaN intermediate layers
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