GaN grown on Si(111) with step-graded AlGaN intermediate layers-Reference-Cited by-同舟云学术

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GaN grown on Si(111) with step-graded AlGaN intermediate layers

Published:2010-08 Issue:21 Volume:256 Page:6367-6370
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang C.C.,Chang S.J.,Chuang R.W.,Lin J.C.,Cheng Y.C.,Lin W.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Thermal stability of GaN on (111) Si substrate

4. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

5. High quality GaN–InGaN heterostructures grown on (111) silicon substrates

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1. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer;Scientific Reports;2023-05-31

2. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22

3. Investigation on the relationship between dislocation type and the annihilation mechanism of GaN-on-Si;Materials Letters;2022-03

4. Bioenergy with carbon capture and storage (BECCS) potential in jet fuel production from forestry residues: A combined Techno-Economic and Life Cycle Assessment approach;Energy Conversion and Management;2022-03

5. Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV;Applied Physics Letters;2022-02-28

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