Role of hole trapping in the unintentionally doped GaN layer in suppressing the two-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si-Reference-Cited by-同舟云学术

Role of hole trapping in the unintentionally doped GaN layer in suppressing the two-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si

Published:2019-05-07 Issue:31 Volume:30 Page:314002
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Hu Anqi^ORCID,Song Chunyan,Yang Xuelin,He Xiaoying,Shen Bo,Guo Xia

Funder

the National Key Research and Development Program of China

the National Natural Science Foundation of China

the Fundamental Research Funds for the Central Universities

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/ab1948/pdf

Reference20 articles.

1. Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

2. Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

3. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

4. Correlation Between Epitaxial Layer Quality and Drain Current Stability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

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