Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates-Reference-Cited by-同舟云学术

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Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

Published:2011-07 Issue:7 Volume:32 Page:922-924
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chu Mu-Tao,Liao Wen-Yih,Horng Ray-Hua,Tsai Tsung-Yen,Wu Tsai-Bau,Liu Shu-Ping,Wu Ming-Hsien,Lin Ray-Ming

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5931087/05768062.pdf?arnumber=5768062

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2. Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell;Engineering Research Express;2023-08-29

3. Structural, Optical and Electrical Properties of Band-Aligned CdBr2/Au/Ga2S3 Interfaces and Their Application As Band Filters Suitable for 5G Technologies;Journal of Electronic Materials;2022-04-24

4. A cost-effective technology to improve power performance of nanoribbons GaN HEMTs;Applied Physics Letters;2022-01-24

5. GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm ² Specific On‐Resistance;physica status solidi (RRL) – Rapid Research Letters;2022-01-22

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