A cost-effective technology to improve power performance of nanoribbons GaN HEMTs-Reference-Cited by-同舟云学术

A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

Published:2022-01-24 Issue:4 Volume:120 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Soltani A.¹²^ORCID,Benbakhti B.³^ORCID,Gerbedoen J.-C.⁴,Khediri A.⁵,Maher H.²^ORCID,Salvestrini J.-P.⁶^ORCID,Ougazzaden A.⁶^ORCID,Bourzgui N. E.¹^ORCID,Barkad H. A.⁷

Affiliation:

1. IEMN/CNRS 8520, Cité Scientifique, Avenue Poincaré, Villeneuve d'Ascq 59651, France

2. LN2, CNRS-IRI-3463, 3IT, Université de Sherbrooke, 3000 Bd de l'Université, Sherbrooke J1K0A5, Quebec, Canada

3. School of Engineering, Liverpool John Moores University, L3 3AF Liverpool, United Kingdom

4. LIMMS/CNRS-IIS, UMI 2820, The University of Tokyo, Lille 59000, France

5. Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbès, Sidi Bel Abbès 22000, Algeria

6. UMI 2958 CNRS, Georgia Institute of Technology, GT-Lorraine, Metz 57070, France

7. Institut Universitaire de Technologie Industrielle, Université de Djibouti, BP 1904 Djibouti, Djibouti

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0080240

Reference32 articles.

1. S. Yoshida , J. Li , T. Wada , and H. Takehara , in ISPSD '03, 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003, Proceedings ( IEEE, Cambridge, 2003), pp. 58–61.

2. Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

3. High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

4. A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

5. Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

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