Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE-Reference-Cited by-同舟云学术

Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE

Published:2024 Issue: Volume: Page:
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Zhongxin¹,Wang Shouzhi¹²^ORCID,Liu Lei¹,Yu Jiaoxian³,Wang Guodong¹,Li Qiubo¹,Qi Zhanguo¹,Xu Xiangang¹,Zhang Lei¹²^ORCID

Affiliation:

1. Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China

2. Shandong Crystal GaN Semiconductor Co., Ltd, Jinan, 250100, P. R. China

3. Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

Abstract

The effect of two-step etching on a substrate surface structure was investigated, and the nucleation mechanism and dislocation evolution of HVPE-grown GaN on porous structures were studied in depth.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

State Key Laboratory of Crystal Materials

Shenzhen Science and Technology Innovation Program

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00726C

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2. GaN Power Transistors on Si Substrates for Switching Applications

3. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors

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