Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice-Reference-Cited by-同舟云学术

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Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice

Published:2016-01 Issue: Volume:362 Page:434-440
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lin Po-Jung,Huang Shih-Yung,Wang Wei-Kai,Chen Che-Lin,Chung Bu-Chin,Wuu Dong-Sing

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. A survey of wide band gap semiconductor devices;Millán;J. IEEE Trans. Power Electron.,2014

2. GaN on Si Substrate with AlGaN/AlN Intermediate Layer;Ishikawa;Jpn. J. Appl. Phys.,1994

3. Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1μm in thickness;Dadgar;Jpn. J. Appl. Phys.,2000

4. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy;Feltin;Appl. Phys. Lett.,2001

5. 1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate;Selvaraj;IEEE Electron Device Lett.,2012

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1. Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al_0.07Ga_0.93N back barrier layer;Semiconductor Science and Technology;2024-07-11

2. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy;Materials;2024-06-14

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4. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111);Micromachines;2024-04-16

5. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10

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