Suppression of p-type parasitic channel formation at the interface between the aluminum nitride nucleation layer and the high-resistivity silicon substrate-Reference-Cited by-同舟云学术

Suppression of p-type parasitic channel formation at the interface between the aluminum nitride nucleation layer and the high-resistivity silicon substrate

Published:2023-02 Issue: Volume:36 Page:102590
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Lin Pojung,Liu Jiazhe,Lin Hongche,Chuang Zhiyuan,Hsu Wenching,Chen Yiche,Liu Poliang,Horng Rayhua^ORCID

Funder

Ministry of Science and Technology

National Science and Technology Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference20 articles.

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3. The impact of AlGaN back barrier in AlGaN/GaN high electron mobility transistor on six-inch MCZ Si substrate;Wang;Coatings,2020

4. GaN on Si HEMTs for wireless base station;Iucolano;Mater. Sci. Semicond. Process,2019

5. Sixteen years GaN on Si, Phys. Status Solidi (b);Dadgar;Basic Res,2015

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates;Applied Physics Letters;2024-08-12

2. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation;Surfaces and Interfaces;2024-08