Impact of Protective Layer Structures on High‐Temperature Annealing of GaN-Reference-Cited by-同舟云学术

Impact of Protective Layer Structures on High‐Temperature Annealing of GaN

Published:2022-11-17 Issue:24 Volume:219 Page:2200505
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Wang Zheming¹²^ORCID,Deng Xuguang²^ORCID,Fu Houqiang³⁴,Zhang Li²,Yu Guohao²,Xu Kun²,Yang Feng²,Fan Yaming⁵,Zhang Baoshun¹

Affiliation:

1. School of Nano Technology and Nano Bionics University of Science and Technology of China Hefei 230026 P. R. China

2. Nanofabrication Facility of Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences (CAS) Suzhou 215123 P. R. China

3. Department of Electrical and Computer Engineering Iowa State University Ames IA 50011 USA

4. School of Electrical, Computer and Energy Engineering Arizona State University Tempe AZ 85287 USA

5. Division of Nano-Devices and Technologies & Nanchang Key Laboratory of Advanced Packaging Jiangxi Institute of Nanotechnology Nanchang 330200 China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200505

Reference18 articles.

1. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

2. Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

3. Co-implantation of Si+N into GaN forn-type doping

4. Ion implantation doping for AlGaN/GaN HEMTs

5. Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

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