Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers-Reference-Cited by-同舟云学术

Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

Published:2012-02 Issue: Volume:272 Page:137-140
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Cayrel F.,Bazin A.E.,Lamhamdi M.,Benchanaa Y.,Menard O.,Yvon A.,Collard E.,Alquier D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

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4. The Encyclopedia of Advanced Materials;Lin,1994

5. High voltage (450 V) GaN Schottky rectifiers

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