Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
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1. Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN -on- Si Heterostructures and p - n Diodes by Multiple Microscopy Techniques;Physical Review Applied;2023-03-24
2. Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures;Materials Science in Semiconductor Processing;2022-11
3. Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy;Journal of Applied Physics;2022-01-07
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