Surface state of GaN after rapid-thermal-annealing using AlN cap-layer-Reference-Cited by-同舟云学术

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Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Published:2015-11 Issue: Volume:355 Page:1044-1050
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

El-Zammar G.,Khalfaoui W.,Oheix T.,Yvon A.,Collard E.,Cayrel F.,Alquier D.

Funder

OSEO

Bpi France

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Ni based planar Schottky diodes on gallium nitride (GaN) grown on sapphire;Menard;Phys. Status Solidi.,2010

2. Si+ implantation and activation in GaN comparison of GaN on sapphire and GaN on silicon;Bazin;Mater. Sci. Forum,2012

3. Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps;Sundaresan;Semicond. Sci. Technol.,2007

4. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN;Feigelson;J. Cryst. Growth,2012

5. Novel activation process for Mg-implanted GaN;Hashimoto;J. Cryst. Growth,2014

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Protective Layer Structures on High‐Temperature Annealing of GaN;physica status solidi (a);2022-11-17

2. Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures;Materials Science in Semiconductor Processing;2022-11

3. Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies;Materials Science in Semiconductor Processing;2022-08

4. Over 1 GW/cm2 for high-power GaN p-i-n diodes with edge termination structure and laser annealing;Journal of Vacuum Science & Technology B;2019-01

5. Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si;ECS Transactions;2017-08-17

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