Characteristics ofin situMg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps-Reference-Cited by-同舟云学术

Characteristics ofin situMg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Published:2007-09-07 Issue:10 Volume:22 Page:1151-1156
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sundaresan Siddarth G,Murthy Madhu,Rao Mulpuri V,Schreifels John A,Mastro M A,Eddy Charles R,Holm R T,Henry R L,Freitas Jaime A,Gomar-Nadal Elba,Vispute R D,Tian Yong-Lai

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Ion implantation into GaN

2. Thermodynamic Assessment of the Gallium-Nitrogen System

3. Rapid Thermal Processing of Semiconductors

4. GaN: Processing, defects, and devices

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