Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon

Author:

Bazin Anne Elisabeth1,Cayrel Frédéric2,Lamhamdi Mohamed2,Yvon Arnaud3,Houdbert Jean Christophe3,Collard Emmanuel3,Alquier Daniel1

Affiliation:

1. Université François Rabelais

2. Université François Rabelais de Tours

3. Stmicroelectronics

Abstract

In this paper, we evaluated gallium nitride heteroepitaxially grown on sapphire (GaN/Sa) and grown on silicon (GaN/Si) faced to implantation doping. Si+ was implanted on low doped n-type epilayers in order to create a plateau around 1020at.cm-3. All the samples were capped with a silicon oxide and annealed between 1000°C and 1150°C. The surface quality was evaluated in terms of roughness, pit density and maximum pit diameter using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Finally, the dopant electrical activation was studied with Ti-Al contacts using the circular Transfert Length Method (c-TLM). This study shows that low Specific Contact Resistance (SCR) values of 8x10-5Ω.cm2 and 6x10-6Ω.cm2 are respectively obtained on GaN/Sa sample annealed at 1150°C-2min and on GaN/Si sample annealed at 1150°C-30s, proving that good ohmic contacts are obtained on both materials. Nevertheless, a compromise has to be done between the low SCR values obtained and the GaN surface degradation, observed by AFM and SEM after the different annealing treatments and which could affect the good behaviour of the GaN devices.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation;IEEE Transactions on Semiconductor Manufacturing;2019-11

2. Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04

3. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer;Applied Surface Science;2015-11

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