Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference87 articles.
1. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates
2. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
3. Growth of III-nitride photonic structures on large area silicon substrates
4. Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method
5. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate
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1. Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors;Materials Science in Semiconductor Processing;2024-03
2. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy;Thin Solid Films;2024-02
3. Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111);IEEE Transactions on Electron Devices;2023-07
4. Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications;Microelectronic Engineering;2023-05
5. Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates;Journal of Crystal Growth;2022-06
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