Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)-Reference-Cited by-同舟云学术

Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Published:2023-07 Issue:7 Volume:70 Page:3649-3655
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pal Pinki¹^ORCID,Kaur Amandeep¹,Suihkonen Sami²^ORCID,Lemettinen Jori²,Laha Apurba³^ORCID,Dhar Subhabrata¹^ORCID,Mahapatra Suddhasatta¹^ORCID

Affiliation:

1. Department of Physics, IIT Bombay, Mumbai, India

2. Department of Electronics and Nanoengineering, Aalto University, Aalto, Finland

3. Department of Electrical Engineering, IIT Bombay, Mumbai, India

Funder

Ministry of Electronics and Information Technology (MeitY), Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10143735.pdf?arnumber=10143735

Reference46 articles.

1. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

2. Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

3. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

4. Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si

5. Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

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