(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel-Reference-Cited by-同舟云学术

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(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

Published:2024-08-27 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kaur Amandeep¹^ORCID,Arora Simran¹,Chetry Pankaj²^ORCID,Sarin Pradeep¹,Dhar Subhabrata¹

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

2. IIT Bombay Monash Research Academy, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

Funder

Council of Scientific and Industrial Research, India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01062

Reference36 articles.

1. III-nitride based deep ultraviolet light sources

2. Polarization assisted self-powered GaN-based UV photodetector with high responsivity

3. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

4. Gallium Nitride –Based Photodiode: A review

5. Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

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