Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate-Reference-Cited by-同舟云学术

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Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate

Published:2018-08 Issue: Volume:120 Page:720-726
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ni Yiqiang,Li Liuan,He Liang,Que Taotao,Liu Zhenxing,He Lei,Wu Zhisheng,Liu Yang

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Guangdong Natural Science Foundation

Science and Technology Plan of Guangdong Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. GaN power transistors on Si substrates for switching applications;Ikeda;Proc. IEEE,2010

2. Uniform growth of AlGaN/GaN high electron mobility transistors on 200 mm silicon (111) substrate;Christy;APEX,2013

3. Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate;Selvaraj,2011

4. AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation;Iwakami;Jpn. J. Appl. Phys.,2004

5. Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V);Freedsman;APEX,2014

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1. Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors;Journal of Applied Physics;2024-07-23

2. Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si;Applied Physics Letters;2024-07-08

3. Modulation of localized phonon thermal transport at GaN/Al Ga1-N heterointerface: Polar surface, doping, and compressive Strain;International Journal of Heat and Mass Transfer;2024-03

4. Experimental and theoretical investigation of the effect of Sn on κ-Ga2O3 growth;Journal of Materials Science;2022-11

5. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere;Japanese Journal of Applied Physics;2022-06-27

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