Valence and conduction band offsets in AZO/Ga2O3 heterostructures-Reference-Cited by-同舟云学术

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Valence and conduction band offsets in AZO/Ga2O3 heterostructures

Published:2017-07 Issue: Volume:141 Page:103-108
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Carey Patrick H.,Ren F.,Hays David C.,Gila B.P.,Pearton S.J.,Jang Soohwan,Kuramata Akito

Funder

Defense Threat Reduction Agency

Ministry of Education

Ministry of Science

ICT and Future Planning

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference34 articles.

1. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

2. The electronic structure of Ga2O3;Mohamed;Appl. Phys. Lett.,2010

3. Development of gallium oxide power devices;Higashiwaki;Phys. Stat. Solidi A,2014

4. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage;Chabak;Appl. Phys. Lett.,2016

5. 3.8-MV/cm breakdown strength of MOVPE-grown Sn-Doped β-Ga2O3 MOSFETs;Green;IEEE Electron Dev. Lett.,2016

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