Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H

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Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H–SiC substrates

Published:2024-06 Issue: Volume:224 Page:113164
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Xu Bei,Hu Jichao^ORCID,Zhang Qi,He Xiaomin,Wang Xi,Li Yao^ORCID,Zhang Chao,Dong Linpeng^ORCID,Pu Hongbin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference50 articles.

1. Lifetime laser damage performance of β- Ga2O3 for high power applications;Yoo;Apl. Mater.,2018

2. Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition;Joshi;J. Alloys Compd.,2021

3. Investigation of the interface electronic characteristics of β- Ga2O3 (100)/4H-SiC (0001);Xu;J. Cryst. Growth,2023

4. Synthesis of wide bandgap Ga2O3 (Eg∼ 4.6–4.7 eV) thin films on sapphire by low pressure chemical vapor deposition;Rafique;Phys. Status Solidi A,2016

5. Ga2O3 thin films for high-temperature gas sensors;Ogita;Appl. Surf. Sci.,1999

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