Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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5. W. Li, Z. Hu, K. Nomoto, R. Jinno, Z. Zhang, T.Q. Tu, K. Sasaki, A. Kuramata, D. Jena, H.G. Xing, 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current, in: 2018 IEEE International Electron Devices Meeting (IEDM). IEEE, 2018, pp. 8–5. doi: 10.1109/IEDM.2018.8614693.
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