Author:
Fei Cao,Gao-hui Wu,Long-tao Jiang,Guo-qin Chen
Funder
National Natural Science Foundation of China
Natural Science Foundation of Heilongjiang Province of China
Excellent Youth Foundation of Heilongjiang Province of China
Scientific and Technical Innovation Talent Foundation of Harbin
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference24 articles.
1. International Technology Roadmap for Semiconductors,2006
2. The self- formatting barrier characteristics of Cu–Mg/SiO2 and Cu–Ru/SiO2 films for Cu interconnects;Yi;Microelectron. Reliab,2008
3. Performance improved by incorporating of Ru atoms into Zr–Si diffusion barrier for Cu metallization;Wang;Chin. Phys. Lett.,2012
4. Liner materials for direct electro deposition of Cu;Lane;Appl. Phys. Lett.,2003
5. 5 nm ruthenium thin film as a directly plateable copper diffusion barrier;Arunagiri;Appl. Phys. Lett.,2005
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