Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect-Reference-Cited by-同舟云学术

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect

Published:2019-12-17 Issue:2 Volume:12 Page:3104-3113
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

An Byeong-Seon¹^ORCID,Kwon Yena¹^ORCID,Oh Jin-Su¹^ORCID,Lee Changmin¹^ORCID,Choi Seongheum¹,Kim Hyoungsub¹^ORCID,Lee Miji²,Pae Sangwoo²,Yang Cheol-Woong¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea

2. Samsung Foundry Business, Samsung Electronics, GiHeung 17113, Korea

Funder

Samsung

Ministry of Trade, Industry and Energy

Korea Basic Science Institute

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b15562

Reference50 articles.

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3. An introduction to Cu electromigration

4. Diffusion barrier properties of amorphous and nanocrystalline Ta films for Cu interconnects

5. Diffusion barrier property of TaN between Si and Cu

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