Author:
Yi Seol-Min,Jang Kwang-Ho,An Jung-Uk,Hwang Sang-Soo,Joo Young-Chang
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Multilevel interconnections for ULSI and GSI era;Murarka;Mater Sci Eng R,1997
2. Self-forming diffusion barrier layer in Cu–Mn alloy metallization;Koike;Appl Phys Lett,2005
3. Capacitance–voltage, current–voltage, and thermal stability of copper alloyed with aluminium or magnesium;Suwwan de Felipe;Thin Solid Films,1998
4. Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film;Lee;Appl Phys Lett,2000
5. Takewaki T, Kaihara R, Ohmi T, Nitta T. Excellent electro/stress-migration-resistance surface-silicide passivated giant-grain Cu–Mg alloy interconnect technology for giga scale integration (GSI). In: Proceeding of international electron devices meeting, 1995; 253–6.
Cited by
22 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献