Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film-Reference-Cited by-同舟云学术

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Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film

Published:2000-10-02 Issue:14 Volume:77 Page:2192-2194
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee W. H.,Cho H. L.,Cho B. S.,Kim J. Y.,Nam W. J.,Kim Y-S.,Jung W. G.,Kwon H.,Lee J. H.,Lee J. G.,Reucroft P. J.,Lee C. M.,Lee E. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1314879

Reference10 articles.

1. Interconnect technology trend for microelectronics

2. Diffusion Barrier Characteristics of Hf(C,N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization

3. Thermal annealing of buried Al barrier layers to passivate the surface of copper films

4. Self‐aligned passivation on copper interconnection durability against oxidizing ambient annealing

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